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July 1, 1998Journal of The Electrochemical Society

Gravitational Stress‐Induced Dislocations in Large‐Diameter Silicon Wafers Studied by X‐Ray Topography and Computer Simulation

Hirofumi Shimizu Seiichi Isomae Kyoko Minowa Tomomi Satoh Tadashi Suzuki

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Abstract

Gravitational Stress‐Induced Dislocations in Large‐Diameter Silicon Wafers Studied by X‐Ray Topography and Computer Simulation, Shimizu, Hirofumi, Isomae, Seiichi, Minowa, Kyoko, Satoh, Tomomi, Suzuki, Tadashi

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Shimizu et al. (1998) studied this question.

synapsesocial.com/papers/6ac305ed4f0ee93cd843caf2 https://doi.org/10.1149/1.1838672

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