Supersonic CH3Cl Molecular Beam Dissociative Adsorption and SiC Formation on Si(111)-(7 × 7)

Using CH3Cl supersonic molecular beams and synchrotron radiation X-ray photoelectron spectroscopy, we studied SiC formation on Si(111)-(7 × 7). We observe CH3Cl dissociative adsorption into CH3 and Cl. Subsequent CH3 dehydrogenation results in the formation of H–Si and CHx–Si (x = 1, 2) (surface) complexes. Hydrogen desorption (at surface temperature TS ≈ 788 K) results in SiC formation (surface carbon accumulation), and Cl desorption releases SiCl (silicon chloride species). P- and n-type Si show the same reactivity at TS ≈ 788 K.