A novel method for calculating electrical and thermal parameters of graphene nanoparticles on a porous silicon prepared by drop casting method

Due to its prospective use in chemical sensors, flat-panel displays, and optoelectronics, porous silicon (PS) has recently garnered considerable scientific interest. (PECE) Photo-Electrochemical Etching is used on silicon wafer (Si) (N-type) with 20% hydrofluoric acid (HF) and ethanol (C2H5OH) concentration at 15 mA/cm2 current density for 15 minutes, nanostructure porous silicon (PS) is fabricated. Drop casting method has been used to deposit the graphene on the n-type Si substrate. Several techniques are used to characterize the porous silicon nanostructures that are manufactured. The production of porous silicon is confirmed by X-ray diffraction (XRD), and the crystal size decreases in the direction of the face-centered cubic structure's nonmetric scale. The Scanning Electron Microscope (SEM) reveals that the structure of PS with orientation (100) resembles a sponge. The composition of the samples is depicted using (EDXA) energy dispersive X-ray Spectroscopy. (FTIR) Fourier-transform infrared spectroscopy has been used to measure the bonds of the materials prepared. Atomic force microscope is utilized to calculate the roughness of the samples. UV-vis spectroscopy is utilized to calculate the optical properties of the samples such as; transmittance; reflectance; and refractive index. Drop casting method has been used to deposit the graphene on the n-type Si substrate. The electrical behavior of the prepared samples has been examined; in addition, the thermal behavior of the samples is examined.