Influence of Metal–Organic Chemical Vapor Deposition MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability

Two-dimensional (2D) materials are promising resistive switching materials for vertical memristors due to their ultimate thinness and low-power operation. However, high electrical variability remains a challenge, and reducing it through materials engineering remains largely unexplored. Here, we investigate how the properties of 2D multilayer molybdenum disulfide (MoS2), grown by metal–organic chemical vapor deposition (MOCVD), influence variability in memristors with metal electrodes. Two MoS2 batches were prepared under different MOCVD growth conditions, resulting in distinct surface roughness and grain sizes. Devices based on smoother, more uniform MoS2 with larger grains exhibited significantly reduced electrical variability. Based on established grain-boundary-assisted filament models, the larger crystallites provide a plausible explanation for the reduced variability, although the contributions of individual material properties cannot be separated in the present comparison. More than 60 devices per batch were tested, providing a robust statistical basis. These results show that optimizing MoS2 grain size and uniformity can improve memristor reliability and highlight the potential of MOCVD as el6c01424_toca scalable route toward improved statistical uniformity in MoS2 films.