Electrical and optical properties of Zr doped β-Ga2O3 single crystals

Sn and Si are the typical dopants for achieving tunable n-type conductivity of β -Ga 2 O 3 single crystals grown from the melt. Here, we explore Zr doping in β -Ga 2 O 3 as assessed with UV–vis-NIR, Hall Effect, I – V , and CV measurements and hybrid functional calculations. Single crystals were grown from the melt with nominal Zr doping between 0.1 and 0.5 at% using Czochralski and vertical gradient freeze methods in Ar + O 2 . Our results suggest that Zr Ga behaves as a shallow donor, with a measured activation energy of ∼10 meV. Our samples show an electron mobility ∼73–112 cm 2 V −1 s −1 , resistivity ∼0.08–0.01 ohm cm, and carrier density of n = 6.5 × 10 17 −5 × 10 18 cm 3 at room temperature.