MOCVD-grown AlInAs/GaInAs MODFET with drain currents higher than 1.3 Am/m

Very high-density and high-mobility AlInAs/GaInAs modulation-doped heterostructures have been successfully grown by low-pressure MOCVD. FETs, having gate lengths of 0.25 μm, fabricated from these heterostructures show transconductances as high as 700mS/mm, and drain saturation currents in excess of l. 3mA/mm at Vgs=0V This current density is among the highest yet reported for FETs grown by any technique. The extracted current-gain cutoff frequency is 78 GHz.