Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed upsets. A method utilizing distributed charges to model strikes to adjacent devices is illustrated and utilized to compare the effect of strike kernel models in such Charge Sharing SETS (CSSETS). Bias-dependent models are shown to more accurately predict expected physical observations and Technology Computer Aided Design (TCAD) simulation, especially when such charge-sharing upsets must be considered.