Porous Silicon-Integrated Germanium Quantum Dots for Advanced Radiation Detector Applications

The porous silicon and the porous silicon doped with germanium (Ge) powder were prepared electrochemically, inspired by the mentioned parameters. The proportion of Hydrogen fluoride (HF) to ethanol was 4:1. Field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the sample structure, and it was observed that Ge is present in the sample. We studied the sample current-voltage (I-V) characteristics to observe at which bias voltage on the source the measured current is increasing. Furthermore, fully utilizing the readout capabilities, pulses of X-rays were successfully measured and compared in the investigation of different parameters of X-ray illumination on the sample detector. The porous silicon (PS) and Ge -PS parameters that yield the best results are (90V, 100mA, 1s) and (100V, 10mA, 0.5s).