We experimentally demonstrate a Si spin metal–oxide–semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source–drain current and spin signals at room temperature. The spin channel is nondegenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way for the practical use of the Si spin MOSFET.
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Tahara et al. (2015) studied this question.
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