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Tunnel electroresistance properties have been investigated at the nanoscale for prototype magneto-electric tunnel junctions (METJ) consisting of ferroelectric BaTiO3 and ferromagnetic La0.67Sr0.33MnO3 heterostructures. Combining piezoresponse force and conductive atomic force microscopy, we demonstrate robust and reproducible polarization-dependent tunneling behavior with a resistance ratio between the two polarization states as high as 60 for a 3 unit cell (∼1.2 nm) BaTiO3 tunnel barrier. Our work demonstrates that METJs are scalable down to barrier layer thicknesses comparable to commercial spintronic devices.
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Kim et al. (2013) studied this question.
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