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The performance of semiconductor optical amplifiers (SOAs) employing regions of high and low optical confinement designed for high saturation power and high gain using a novel quantum well intermixing and MOCVD regrowth fabrication scheme is reported. The scheme enables the monolithic integration of high performance SOAs with high gain laser diodes, high efficiency electroabsorption modulators, and high saturation power photodiodes. The SOAs presented exhibit saturation powers in the 19 to 20 dBm range with nearly 15 dB of gain.
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Raring et al. (2005) studied this question.
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