Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped silicon

The luminescence associated with bound multi-exciton complexes in phosphorus doped silicon has been investigated as a function of excitation density. The variation of the relative intensities of the luminescence lines with excitation density is in agreement with the predictions of the Kirczenow shell model (1977) but in conflict with recent decay time studies. New features in the luminescence spectrum are also reported.