Answers are grounded in this paper and cite their sources.
A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n/sup +/- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I/sub k/ vs. cathode voltage V/sub k/ curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results.>
No takes yet. Share an insight, caveat, or question.
Kimura et al. (1994) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: