Au/Pt/GaN Schottky diode rectifiers were fabricated with reverse breakdown voltage (VRB) up to 550 V on vertically depleting structures and >2000 V on lateral devices. The figure-of-merit (VRB)2/RON, where RON is the on-state resistance, had values between 4.2 and 4.8 MW cm−2. The reverse leakage currents and forward on-voltages were still somewhat higher than the theoretical minimum values, but were comparable to SiC Schottky rectifiers reported in the literature. These devices show promise for use in ultrahigh-power switches.
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Dang et al. (2000) studied this question.
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