High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

We report the operation of 12-nm-thick, (110)-oriented Ge-on-insulator p-channel metal–oxide–semiconductor field-effect transistors along <110> channel direction [(110)/<110> GOI pMOSFETs], fabricated by the Ge condensation technique. The device operation under the accumulation mode was observed with the back gate structure. (110)/<110> GOI pMOSFETs have exhibited 2.3 times higher effective hole mobility, comparing with (100)-oriented GOI control devices (µ effGOI(100) ). Also, present devices have the hole mobility enhancement factor of 3.0 and 1.5 against the (100)-oriented Si universal hole mobility and the (110)-oriented Si-on-insulator (SOI) effective hole mobility, respectively. These results demonstrate the superior hole transport properties of (110)/<110> GOI pMOSFETs.