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A comparison of steam oxidation enhancement (at 800°C) of highly arsenic‐doped Si samples, having an arsenic accumulation (“pile‐up”) in the Si / SiO 2 interface region caused either by annealing at 1000°C or by the oxidation process itself, shows that the enhancement is related to the arsenic accumulation.
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Berger et al. (1996) studied this question.
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