Adaptive interface engineering and charge dynamics in CdSe quantum dots: A roadmap toward next-generation quantum optoelectronic technologies

Cadmium selenide quantum dots (CdSe QDs) are among the most promising quantum-confined nanomaterials for next-generation optoelectronic technologies due to their tunable electronic structure, high photoluminescence efficiency, and versatile interface chemistry. This review provides a comprehensive perspective on the interplay between charge dynamics and adaptive interface engineering in CdSe QDs, highlighting their critical roles in the development of advanced quantum light-emitting diodes (QLEDs) and multifunctional photonic systems. Fundamental relationships among crystal structure, excitonic states, surface chemistry, and compositional engineering are examined to elucidate their influence on carrier injection, transport, recombination, and operational stability. Charge transport mechanisms in quantum-dot assemblies, including inter-dot coupling, hopping conduction, energetic disorder, and trap-mediated processes, are discussed within the framework of collective electronic behavior. Recent advances in ligand engineering, core/shell architectures, doping strategies, and interface regulation are analyzed as key approaches for improving device efficiency and durability. Beyond conventional light-emitting applications, emerging opportunities in adaptive photonics, photocatalysis, and intelligent optoelectronic systems are explored. Current challenges associated with stability, sustainability, and scalable manufacturing are also addressed. By integrating structure–property–performance relationships with future-oriented materials design concepts, this review outlines strategic directions for the realization of efficient, robust, and adaptive CdSe-based quantum optoelectronic technologies.