Towards Smart Short‐Wave Infrared Photodetection and Optical Communication By Antimonide Nanowires

With the narrow bandgap and high carrier mobility, III‐V antimonide semiconductor nanowires (NWs) are promising the short‐wave infrared (SWIR) photodetection and optical communication. Here, the high‐quality ternary antimonide NWs of InGaSb are grown by a sulfur‐assisted chemical vapor deposition strategy. The as‐grown InGaSb NWs exhibit a high peak hole mobility of 184.5 ± 7.2 cm 2 V −1 s −1 , as well as broadband photoresponse from visible light to SWIR. The broadband photoresponse results from the effectively incorporation of In, tailoring the bandgap of antimonide NWs from 0.72 to 0.55 eV. Notably, under the illumination of 2200 nm laser, the as‐fabricated stable photodetector achieves a responsivity of 126.15 A W −1 , a detectivity of 7.17 × 10 10 cm Hz 1/2 W −1 , and a fast response time of 6/10 ms. With the excellent photodetection behaviors, the as‐fabricated photodetector enables stable SWIR imaging and optical communication. This work provides an effective route of antimonide NWs for the coming SWIR intelligent optoelectronics.