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The impact of wet versus dry dummy dielectric removal approaches on replacement metal gate (RMG) high-klast (RMG-HKL) pMOSFETs, with aggressively scaled high-kgate dielectric, has been studied by low-frequency noise. It is shown that excess generation-recombination noise, ascribed to random telegraph noise, causes a significant variability in the power spectral density (PSD). The best average PSD and the smallest device-to-device spread have been obtained by the remote-plasma dummy-gate removal followed by an in situ HF exposure prior to atomic layer deposition of HfO2.
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Simoen et al. (2012) studied this question.
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