We investigated the variation of electrical performances of solution-processed zinc tin oxide thin-film transistors (ZTO TFTs) when their channel layer was exposed to ambient gases at room temperature. During our research, we observed that adsorption of H 2 O on the backchannel surface can act as an electron trap and/or donor, depending on the amount of H 2 O. In addition, we found that the abnormal behavior seen in the TFTs was caused by different rates of adsorption/desorption. Finally, the instability in the electrical characteristics of the ZTO TFTs caused by the ambient atmosphere can easily be reversed by vacuum seasoning.
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Kim et al. (2012) studied this question.
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