Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

Boron-dopedp⁺nanocrystalline diamond (NCD) films are implemented as heat spreading gate contacts to AlGaN/GaN high-electron-mobility transistors. This device demonstrates a reduced ON-resistance, reduced gate leakage, and significantly increased ON-state current density compared with the reference Ni/Au-gated devices from the same wafer. The NCD gate electrode is thermally stable, chemically stable, optically transparent, and places a heat spreading film in direct contact with the gate edge, which is the hottest part of the device.