Answers are grounded in this paper and cite their sources.
This communication reports for the first time, the impact of device geometry on the stress-dependent offset voltage of single crystal p-type 3C–SiC four terminal devices.
No takes yet. Share an insight, caveat, or question.
Qamar et al. (2015) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: