Diffuse x-ray scattering from stacking faults in a -plane GaN epitaxial layers

Diffuse x-ray scattering from various types of stacking faults in basal $(0001)$ planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined. The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations.