Programming-Current-Induced Mechanism Crossover Enables Reconfigurable Memory Window in In2Te3 Selector-Only Memory

Selector-only memory (SOM), which integrates threshold switching and data storage within a chalcogenide layer, is a promising high-density memory technology, yet the regulation of memory characteristics and underlying mechanisms remain unclear. Here we demonstrate that programming current (Ip) regulates the competition between composition-driven and trap-associated switching processes in amorphous In2Te3 devices. Decreasing Ip from 10–2 to 10–4 A reversibly changes the positive-read threshold voltage (Vth) ordering from Vth, SET > Vth, RESET, yielding an inverted memory window of up to 1.53 V, to Vth, SET < Vth, RESET, with a conventional memory window of ∼0.5 V. Cross-sectional energy-dispersive X-ray spectroscopy reveals state-dependent In/Te redistribution at high Ip, consistent with composition-mediated modulation of conductive pathways. At low Ip, atomic redistribution is suppressed and trap-associated transport modulation is enhanced, with extracted trap depths of 0.51 eV (SET) and 0.63 eV (RESET), establishing Ip as a means of modifying SOM memory characteristics without complex engineering.