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Metallorganic chemical vapor deposition of copper using a new organometallic precursor, (hexafluoroacetylacetonate) (allyltrimethylsilane) was studied. It was confirmed that copper could be deposited at a substrate temperature as low as . The copper film was deposited at a precursor vaporization temperature of and a substrate temperature of , resulting in a copper film with resistivity around .
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Man‐Young Park (1999) studied this question.
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