Property of HexafluoroacetylacetonateCu(I) (3,3-Dimethyl-1-butene) as a Liquid Precursor for Chemical Vapor Deposition of Copper Films

An organometallic precursor, hexafluoroacetylacetonate ( hfac ) Cu ( I ) (3,3‐dimethyl‐1‐butene) (DMB) was studied for metallorganic chemical vapor deposition of copper thin films. It was found that at 40 ° C , the vapor pressure was an order of magnitude higher ( about 2 Torr ) than ( hfac ) Cu vinyltrimethyIsilane, and films could be deposited at the substrate temperature of 100 – 280 ° C with a substantially higher deposition rate. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0 μ Ω cm in the deposition temperature range of 150 – 250 ° C . From the thermal analysis, ( hfac ) Cu ( I ) (DMB) is believed to be stable and no appreciable amount of precipitation was observeon holding the temperature at 65 ° C for more than a month.