Design and Analysis of a Millimeter-Wave Wideband GaN LNA With Inductive Feedback Network

This letter presents a novel method for analyzing inductive feedback network (IFN) and assisting the design of high-performance millimeter-wave low-noise amplifiers (LNAs). By constructing contour plots of noise figure (NF) and gain enhancement factor as functions of feedback parameters, the proposed approach visually illustrates the trade-offs among noise, gain, and gain flatness introduced by IFN, thus improving the overall performance. To validate the method, a 10–30 GHz LNA was implemented using a0.15~μm GaN HEMT process. Measurement results indicate that the proposed LNA can deliver a flat gain of26.6~± ~1.5dB, a low NF of 2.1–3.4 dB, and excellent linearity with an output-referred third-order intercept power (OIP3) of 24–30.7 dBm and 1-dB compression power (OP1dB) of 13.4–21.7 dBm.