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The objective of the current study is to characterize AlInGaN nanostructure for the optoelectronic applications. Synthesize of quaternary AlInGaN nanostructure by Chemical Vapour Deposition method for different temperatures. AlInGa-EDTA complex were nitridated at different temperatures. X-ray diffraction reveals that AlInGaN samples were wurzite structure. While increasing synthesize temperature X-ray diffraction peaks were shifting higher angle side. It also represented has same in XPS and Raman studies. Raman analysis of the AlInGaN, A 1 (LO) mode of AlGaN-like Phonons and InGaN-like clusters peaks were observed. When increasing growth temperature, morphology has been changes from spherical like microstructure to clusters like nanoparticles by Scanning Electron Microscopy. The particle size has been changes from 20 nm to 11 nm revealed by High Resolution Transmission Electron Microscopy and also XRD, SAED pattern represented that AlInGaN samples were poly-crystalline nature. Room temperature photoluminescence measurement shows that AlInGaN nanostructure near-band-edge emission blue shift.
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Kuppulingam et al. (2026) studied this question.
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