A Novel Dopingless Circular MOSFET with S/D Schottky Contact

In this paper, a dopingless circular gate metal oxide semiconductor field effect transistor (DL-CG-MOSFET) with source/drain schottky contact has been designed for low power circuit applications. Study of electrical parameters is carried out by changing the oxide material (HfO 2 , SiO 2 , Al 2 O 3 ), gate oxide thickness and gate length. Device performance also has been observed by employing oxide engineering and work-function engineering. Device parameters like ON current, OFF current, ON/OFF current ratio, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and gate capacitance (Cgg) calculated to analyse device performance. ON current of order 10 -5 A is obtained and leakage current is reduced up to the order of 10 -16 A which shows good ON/OFF ratio. Furthermore, this study examined the performance of DL-CG-MOSFET by minimizing the gate length from 40 nm to 10 nm and Si thickness 5 nm–8 nm with oxide thickness variation from 2nm-4nm.