Prasanna Venkatesan Ravindran

Recent publications by Prasanna Venkatesan Ravindran

1. Kinetic control of ferroelectricity in epitaxial barium titanate thin film capacitorsAPL Electronic Devices · Tue,
2. Pushing the limits of NAND technology scaling with ferroelectricsMRS Bulletin · Mon,
3. The First Switch Effect in Ferroelectric Field-Effect TransistorsIEEE Transactions on Device and Materials Reliability · Mon,
4. Comparative Study of Channel Materials for Ferroelectric NAND ApplicationsSun,
5. Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year RetentionSun,
6. Impact of the Endurance Measurement Methodology on Ferroelectric Field Effect Transistor Under the Capacitive Nondestructive ReadIEEE Transactions on Electron Devices · Thu,
7. Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND ApplicationsIEEE Electron Device Letters · Fri,
8. Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC OperationSun,
9. Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress ConditionsSun,
10. Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND ApplicationsSun,