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This is a In Vitro Study study.

Suppression of step bunching in graphene growth on 4° off-axis SiC (0001) by a two-step growth technique

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Two-step growth technique reduces step bunching and surface roughness in graphene on SiC, suggesting improved control.

Step bunching was significantly reduced by a buffer layer, leading to smoother growth surfaces.
The second growth step under argon atmosphere allowed careful control over additional graphene layers.
This analysis highlights the differences in step bunching between on-axis and 4° off-axis substrates.
Use of a two-step growth method may enable improved graphene quality for electronic applications.

Sato et al. (2025) studied this question.

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