This article reveals the role of spectroscopic techniques in identifying defects in micro-LED wafers, highlighting their impact on yield.
This article describes the utility of multimodal spectroscopic metrology tools in characterizing μLED epi-wafers and identifying yield-killing microscopic defects. Techniques applied include photoluminescence mapping, high-resolution photoluminescence, time-resolved photoluminescence, and Raman spectroscopy.
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Praveena Manimunda (2025) studied this question.
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