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September 10, 2025Journal of Materials Chemistry C

High-sensitivity epitaxial Ge/PbSe/CdSe/Bi2Se3 p+pBn+ barrier heterojunction for uncooled middle infrared detection

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Authors

LSLeisheng SuYLYun LiuWLWeili Liu

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Overview

This article reveals how a new heterojunction reduces dark current in MWIR detectors, suggesting enhanced sensitivity.

Key Points

  • The new heterojunction enables significantly lower dark current, improving overall detector performance.
  • Enhanced sensitivity in mid-wave infrared applications shows promise for practical usage in various technologies.
  • Utilizing advanced materials, the design addresses common challenges in the development of efficient detectors.
  • The findings indicate that this approach could lead to better results in uncooled infrared detection.

Cite This Study

Su et al. (2025) studied this question.

synapsesocial.com/papers/68c1a5ff54b1d3bfb60e0284https://doi.org/10.1039/d5tc01859e
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Also Consider

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  1. 1Fully Epitaxial Uncooled PbSe/CdSe/Bi <sub>2</sub> Se <sub>3</sub> Heterojunction Barrier Middle Infrared Detector2026 · 1 citations
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  3. 3Monolithic PbSe/Ge/Si Heteroepitaxial Architecture for Uncooled Dual-Band Infrared Detection2026
  4. 4PbSe/WTe <sub>2</sub> Schottky Heterojunction for Low-Noise Mid-Infrared Detection2026
  5. 5Topological Insulator Bi<sub>2</sub>Se<sub>3</sub> Heterojunction with a Low Dark Current for Midwave Infrared Photodetection2024 · 40 citations