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March 8, 2026ACS Applied Materials & Interfaces

Monolithic PbSe/Ge/Si Heteroepitaxial Architecture for Uncooled Dual-Band Infrared Detection

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Authors

YLYun LiuLSLeisheng SuDYDong Yang

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Overview

Heteroepitaxial architecture enhances dual-band infrared detection, indicating potential for quantum communication and thermal analysis.

Key Points

  • This research addresses the limitations of heteroepitaxial growth for dual-band infrared detectors.
  • Developed a PbSe/Ge/Si heterostructure using a substrate surface selenization technique.
  • Conducted laser illumination tests to measure responsivity and detectivity.
  • Optimized architecture proposed for enhanced performance.
  • Achieved room-temperature responsivity of 0.43 A·W^-1 at 2700 nm and 0.7 A·W^-1 at 1550 nm.
  • Measured peak detectivities of 4.2 × 10^9 cm·Hz^1/2·W^-1 at 3.7 μm and 3.5 × 10^9 cm·Hz^1/2·W^-1 at 1.2 μm.
  • Theoretical optimization predicts increased detectivities reaching 2.0 × 10^10 cm·Hz^1/2·W^-1 and 9.8 × 10^10 cm·Hz^1/2·W^-1 at MIR and NIR.

Cite This Study

Liu et al. (2026) studied this question.

synapsesocial.com/papers/69acc58f32b0ef16a404ff7dhttps://doi.org/10.1021/acsami.5c25952
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