What question did this study set out to answer?

To develop an effective mid- and long-wavelength infrared photodetector with reduced dark current and enhanced performance.

May 7, 2026Advanced Materials Technologies

Fully Epitaxial Uncooled PbSe/CdSe/Bi 2 Se 3 Heterojunction Barrier Middle Infrared Detector

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Authors

LSLeisheng SuDalian University of Technology YLYun LiuDalian University of Technology DYDong YangChongqing Institute of Green and Intelligent Technology

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Implication

This design reveals a reduced dark current in a heterojunction infrared photodetector, suggesting strong performance in room temperature applications.

Key Points

To develop an effective mid- and long-wavelength infrared photodetector with reduced dark current and enhanced performance.
Proposed a pBn + unipolar barrier infrared photodetector
Integrated wide-bandgap CdSe barrier layer into PbSe/Bi 2 Se 3 pn heterojunction
Evaluated performance metrics such as dark current and responsivity under 2.7 µm illumination.
Achieved dark current reduction to 66.1 mA/cm 2 at room temperature
Demonstrated responsivity of 0.59 A/W and detectivity of 2.29 × 10 9 cm·Hz 1/2 ·W −1
Showed strong infrared photoresponse with favorable performance characteristics.

Cite This Study

Su et al. (2026) studied this question.

synapsesocial.com/papers/69fbef86164b5133a91a3757 https://doi.org/10.1002/admt.71021

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Implication

This design reveals a reduced dark current in a heterojunction infrared photodetector, suggesting strong performance in room temperature applications.

Fully Epitaxial Uncooled PbSe/CdSe/Bi 2 Se 3 Heterojunction Barrier Middle Infrared Detector

Discussion

Member takes

Implication

Key Points

Cite This Study

Fully Epitaxial Uncooled PbSe/CdSe/Bi 2 Se 3 Heterojunction Barrier Middle Infrared Detector

Discussion

Member takes

Implication

Key Points

Cite This Study

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