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September 10, 2025Journal of Applied PhysicsOpen Access

Thickness dependent spin to charge interconversion efficiency in polycrystalline BiSb layers deposited on Si substrate

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Authors

TMTalluri ManojVMVenkat MattelaASAkshaykumar Salimath

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Overview

Sputtering growth of BiSb on Si enhances spin-charge conversion efficiency, highlighting the importance of layer thickness.

Key Points

  • Increasing the thickness of BiSb from 8 to 12 nm significantly improves the spin-charge conversion efficiency.
  • Measurements revealed a conversion efficiency of 3.27 in the BiSb(12 nm)/Ti(3 nm)/Py(10 nm) sample.
  • Sputtering growth on Si substrates retains topological surface states, maximizing interfacial efficiency.
  • The presence of a 3 nm Ti insertion layer reduces interdiffusion between BiSb and Py, facilitating better spin transport.

Cite This Study

Manoj et al. (2025) studied this question.

synapsesocial.com/papers/68c1a78154b1d3bfb60e1049https://doi.org/10.1063/5.0280905
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