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This work investigates the thermal stability and spin–orbit torque efficiency of sputter-grown Bi0.9Sb0.1/Py films.

Achieving high spin–orbit torque efficiency and robust thermal stability in the sputter-grown topological bilayer BiSb/Pt

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Randomized trial demonstrates high spin-orbit torque efficiency in bilayer films, indicating potential for advanced memory technologies.

This work investigates the thermal stability and spin–orbit torque efficiency of sputter-grown Bi0.9Sb0.1/Py films.
Examined the effect of annealing temperatures on the SOT efficiency of Bi0.9Sb0.1/Py films.
Implemented a 1.5 nm Pt insertion layer to mitigate degradation during high-temperature processing.
Measured SOT efficiency post-annealing using ferromagnetic resonance techniques.
The SOT efficiency was 0.83 after annealing at 230 °C but dropped by ∼65% at 400 °C.
Incorporation of the Pt layer resulted in a maintained SOT efficiency of 0.85 even after annealing at 400 °C.
The findings support the viability of BiSb-based SOT-MRAM integrated with CMOS technologies.

Tao et al. (2026) studied this question.

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