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September 10, 2025Applied Physics Letters

10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling

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Authors

YGYijin GuoYQYuan QinMPMatthew Porter

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Overview

Observational analysis identifies the key mechanism behind breakdown voltage increases in GaN HEMTs, suggesting new design strategies.

Key Points

  • Peak breakdown voltage upscaling reaches 10 kV in E-mode GaN HEMTs with optimized RESURF thickness, improving performance.
  • Devices with RESURF thickness below 21 nm show enhanced effectiveness in achieving higher breakdown voltages.
  • Findings highlight the important role of donor trap states and low Mg doping near the p-GaN interface for charge balance.
  • The specific on-resistance of 69 mΩ cm2 is significantly lower than that of 10 kV SiC MOSFETs, indicating high efficiency.

Cite This Study

Guo et al. (2025) studied this question.

synapsesocial.com/papers/68c1ad6a54b1d3bfb60e5ee5https://doi.org/10.1063/5.0279059
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