This analysis reveals improved band gap tunability in CdZnSe for opto-electronic applications, suggesting new advancements in quantum computing.
: The tunable band gap of the ternary semiconductor CdₓZn₁₋ₓSe has attracted a lot of interest. This can be achieved by altering the alloy's cadmium (Cd) content (x). Due to its compositional flexibility, which enables fine control over optical and electrical properties, this material holds promise for advanced photonic and opto-electronic applications. The band gap narrows with increasing Cd content, improving infrared absorption and photoluminescence properties, whereas lower Cd concentrations promote blue and ultraviolet emission. Designing solar cells, photo detectors, quantum dot lasers, and high-efficiency light-emitting diodes (LEDs) need this tunability. Moreover, CdₓZn₁₋ₓSe quantum dots and nano structures show robust quantum confinement effects, creating new avenues for photo catalysis, display technologies, and bio imaging. At the Nano scale Cd-rich compositions increase quantum confinement. This results in discrete energy levels, which are vital for quantum bit manipulation.
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Alla Srivani (2025) studied this question.
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