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Transient Multi‐Physical Field‐Circuit and Electro‐Thermal Coupling of Dual PIN Diode Limiter

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Method combines finite-difference time-domain and drift-diffusion model to analyze dual PIN diodes, highlighting transient electro-thermal behavior.

The method accurately predicts the transient characteristics of dual PIN diodes under microwave limiter conditions, enhancing design reliability.
FDTD calculations yield time domain impulse response signals, which are integrated with the DDM-based diode model, ensuring precise analysis.
Validation against COMSOL simulation results confirms the method's efficiency and accuracy in capturing electro-thermal behavior.
This approach provides a comprehensive analysis framework for microwave limiter applications in various electronic systems.

Zhang et al. (2025) studied this question.

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Method combines finite-difference time-domain and drift-diffusion model to analyze dual PIN diodes, highlighting transient electro-thermal behavior.