Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation

Currently, silicon carbide (SiC) is widely recognized as a wide bandgap semiconductor, with expanding applications in harsh environments, such as high temperature and radiation exposure. In this study, we fabricated a planar structure 4H-SiC gate-all-around junction field-effect transistor (JFET), wherein the channel region is formed through ion implantation at varying doses. We successfully produced both normally-on and normally-off JFETs. Moreover, we constructed a JFET commonsource amplifier. The amplifiers achieved a maximum gain of -226.7 (47.1 dB) at a supply voltage of V DD = 30 V.