The device achieves low insertion loss <1dB and high extinction ratio in silicon circuits, suggesting significant performance improvements.
We demonstrate a heterogeneously integrated Si-LN Bragg Grating modulator enabled by micro-transfer printing thin-film lithium niobate (TFLN) onto silicon circuits. The presented device demonstrates low insertion loss <1dB, high extinction ratio of 30dB and an EO bandwidth of 26GHz.
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Tan et al. (2025) studied this question.
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