The study demonstrates significant improvements in optical return loss and responsivity for photodetectors, indicating enhanced performance.
We present advanced Ge shaping techniques for O-band Ge-on-Si photodetectors, achieving -36 dB optical return loss, ~60 GHz 3-dB EO bandwidth, 0.95 A/W responsivity, and average dark current below 30 nA.
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Bian et al. (2025) studied this question.
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