This work demonstrates waveguide-coupled Ge-on-Si photodetectors with high saturation current, indicating potential for RF applications.
We demonstrate novel high-saturation-current waveguide-coupled vertical Ge-on-Si photodetectors, achieving a saturation current of 21.4 mA, a dark current of 30.1 nA at -3 V, and a 3 dB bandwidth of 15.2 GHz at -3 V.
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Tang et al. (2025) studied this question.
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