Analysis reveals improved power conversion efficiency in InGaAsP devices with thicker electrodes under laser irradiation, indicating design implications for optical power systems.
We investigated the electrode thickness dependence of InGaAsP photovoltaic devices for 1.06-µm-range optical wireless power transmission. Epitaxial layers were grown using metal–organic vapor-phase epitaxy. Thick-surface electrodes were formed using electrolytic plating and the liftoff technique. We investigated the current-voltage characteristics under 1064-nm laser irradiation and confirmed that the thick electrode is effective in decreasing the series resistance and improving the fill factor, especially under high-intensity laser irradiation. The maximum power conversion efficiency exceeded 35% at 3.3 W/cm2 laser power density.
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Oshimo et al. (2025) studied this question.
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