Fabricated InGaAsP devices demonstrate over 44% power conversion efficiency for optical wireless power transmission, indicating significant performance improvements.
Herein, InGaAsP photovoltaic devices are fabricated for 1.06 μm band optical wireless power transmission. The fabrication process incorporates multi‐junctions through the introduction of tunnel junctions, an increase in the thickness of the surface electrode, and an outer circular electrode. The epitaxial layers are grown via the metal–organic vapor‐phase epitaxy method. Multi‐junctions are realized via the utilization of Type II tunnel junctions. Results show that an increase in the thickness of the photoresist results in the fabrication of a thicker electrode. The implementation of an outer circular electrode results in a maximum power conversion efficiency that exceeds 44% at a laser irradiation intensity of 1.5 W cm −2 .
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Oshimo et al. (2025) studied this question.
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