Single-event burnout in β-Ga2O3 Schottky barrier diode induced by heavy ion irradiation

This study investigates single-event burnout (SEB) effects in β-Ga2O3 Schottky barrier diodes under heavy ion irradiation. Bi, Ta, and Kr ions with linear energy transfer (LET) values of 99.7, 75, and 37 MeV/(mg·cm2), respectively, were used in the experiments. The results show that the SEB threshold voltage decreases with increasing LET, indicating a strong dependence on energy deposition. In addition, reverse bias is identified as a critical triggering condition for SEB, which occurs only when the applied voltage is high enough to initiate thermal runaway and cause irreversible damage. To further elucidate the failure mechanism, Kr ions were selected for detailed investigation. technology computer-aided design simulations combined with scanning electron microscopy-based failure analysis revealed that transient current surges can rapidly elevate the local temperature. Once the temperature reaches the melting point of Ga2O3 material, SEB is triggered by irreversible thermal failure. Moreover, the failure sites were primarily located at the edge of the Schottky junction, indicating structural vulnerability in this region. These findings clarify the LET and reverse bias dependence of SEB in ultra-wide bandgap devices and provide insights into radiation-hardened design.