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This is a Experimental Study study.

September 23, 2025

Multi-beam mask writer MBM-4000 for high-NA EUV era

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MBM-4000 achieves a writing accuracy specification with an LCDU of 0.41 nm and global position accuracy of 0.99 nm.
Writing tests verified the effectiveness of features like the Coulomb blur reduction system and CD corrections.
The machine incorporates a 10 nm beam size and increased beam current density of 4.2 A/cm² for enhanced resolution.
The upgraded charge effect reduction system minimizes beam position errors due to resist charging.

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Design of multi-beam mask writer improves writing accuracy and reduces charge effects in EUV lithography.

Matsumoto et al. (2025) studied this question.

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