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October 2, 2025ACS Applied Materials & Interfaces

Vertical Field-Effect Near-Infrared Phototransistor with High Responsivity and Detectivity Based on a Au Nanowire Porous Source and a Mixed PbSe-HfO2 Sensing Layer

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Authors

FSFawad SaeedRSRai Muhammad Dawood SultanNDNasrud Din

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Overview

This study demonstrates a novel phototransistor that improves responsivity and detectivity for near-infrared applications, indicating breakthrough potential in sensor technology.

Key Points

  • The proposed VFEPT achieves a responsivity of 256 A W–1, significantly higher than conventional NIR photodiodes.
  • Detectivity reaches 2.5 × 10^15 Jones at 1550 nm, showcasing exceptional performance in low-noise environments.
  • This device integrates a mixed PbSeQD-HfO2 NP sensing layer and porous Au nanowire, optimizing charge accumulation.
  • The unique geometry and material pairing effectively reduce dark current and enhance signal detection for practical applications.

Cite This Study

Saeed et al. (2025) studied this question.

synapsesocial.com/papers/68de8eaeaa6cec72c69ea853https://doi.org/10.1021/acsami.5c11719
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