Demonstrates short channel effect reduction in vertical transistors, suggesting enhanced performance for 2D materials.
Two-dimensional (2D) materials enable vertical field effect transistors (VFETs), which provide an alternative path for scaling down the channels of transistors. The challenge is the short channel effect when the thickness of the 2D channel decreases to ∼10 nm. Here, we show that a VFET with an ultrashort channel can be accomplished by employing a semimetal carbon nanotube (CNT) as a 1D van der Waals (vdW) contact. The CNT-VFETs with 5-10 nm MoS
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Mei et al. (2024) studied this question.
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